SICO Semiconductor Technology (Suzhou) Co., Ltd. focuses on the research and industrialization of the third generation semiconductor core material - silicon carbide epitaxial wafers. The product is mainly used for manufacturing silicon carbide power electronic devices such as SiC SBD, SiC MOSFET, SiC JFET, and SiC BJT.
The company is located in the third generation semiconductor industrial park in the third district of Suzhou Nanocity, covering an area of 5000 square meters. The founding team has over 15 years of experience in mass production of silicon carbide epitaxial wafers. With the most advanced epitaxial process technology and production testing equipment in the industry, we provide customers with 6-inch conductive silicon carbide epitaxial wafers with low defect rates and high uniformity requirements. Since its establishment, the company has achieved multiple extension process innovations and localized replacement of core equipment, and has won major awards such as Gusu Innovation and Entrepreneurship Leading Talent and Suzhou Park Leading Project. In the future, it will continue to improve its research and development level, fully expand its market share, and rapidly grow into a benchmark enterprise with continuous research and development innovation capabilities, leading technology, and promoting technological progress in the entire industry.
