The 6-inch SiC epitaxial wafers of Hico Semiconductor Technology (Suzhou) Co., Ltd. have passed the double inspection of the industry authoritative enterprise Continental Evans Materials Technology (Shanghai) Co., Ltd. and the State Key Laboratory of Wide Band Gap Semiconductor Power Electronic Devices. The inspection results show that Hico Semiconductor Technology (Suzhou) Co., Ltd. can produce SiC epitaxial wafers comparable to international manufacturers by using domestic substrates and domestic epitaxial equipment.

*图为欧陆埃文思材料科技（上海）有限公司检测报告截图

*The picture is the screenshot of the test report of the State Key Laboratory of Wide Band Gap Semiconductor Power Electronic Devices

The epitaxial process is a crucial step in the entire industry. As almost all devices are now implemented on epitaxial, the quality of epitaxy has a significant impact on the performance of devices. However, the quality of epitaxy is also affected by crystal and substrate processing, which is in the middle of an industry and plays a crucial role in the development of the industry.

Adhering to the spirit of technological innovation of "Hope Technology, Drive the Future", Xike Semiconductor continuously explores and innovates in the field of SiC epitaxy. The company has applied for 5 invention patents and 2 utility model patents in total, and the team has 1 doctoral and 5 master's degrees. The company plans to lay out the key links of silicon carbide industry chain material epitaxial wafers, serving the booming semiconductor power device industry in the surrounding areas, and making every effort to further enhance the comprehensive strength of the third-generation semiconductor industry chain in the Yangtze River Delta region, narrow the gap with international major manufacturers, and reshape the global semiconductor landscape.